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IPDQ60R040S7AXTMA1

Infineon Technologies

Product No:

IPDQ60R040S7AXTMA1

Manufacturer:

Infineon Technologies

Package:

PG-HDSOP-22-1

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MOSFET

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Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 12 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	40mOhm @ 13A, 12V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 790µA
Supplier Device Package	PG-HDSOP-22-1
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	272W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™
Package / Case	22-PowerBSOP Module
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tape & Reel (TR)
Base Product Number	IPDQ60R