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IPI023NE7N3G

Infineon Technologies

Product No:

IPI023NE7N3G

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 5746

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

132

$2.166

$285.912

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14400 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.3mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 273µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	75 V
Power Dissipation (Max)	300W (Tc)
Series	OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Infineon Technologies
Package	Bulk

Detail Info

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