Home / Single FETs, MOSFETs / IPI028N08N3GHKSA1

IPI028N08N3GHKSA1

Infineon Technologies

Product No:

IPI028N08N3GHKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

Datasheet:

Description:

MOSFET N-CH 80V 100A TO262-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPI028N08N3GHKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPI028N08N3GHKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPI028N08N3GHKSA1 without requiring registration. Latest information on IPI028N08N3GHKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPI028N08N3GHKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.8mOhm @ 100A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 270µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	300W (Tc)
Series	OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	IPI028N