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IPI11N03LA

Infineon Technologies

Product No:

IPI11N03LA

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

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Datasheet:

Description:

MOSFET N-CH 25V 30A TO262-3

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Parameter Info

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1358 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	11.5mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 20µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	52W (Tc)
Series	OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	IPI11N