Home / Single FETs, MOSFETs / IPI126N10N3GXKSA1

IPI126N10N3GXKSA1

Infineon Technologies

Product No:

IPI126N10N3GXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 10500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

433

$0.6555

$283.8315

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPI126N10N3GXKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPI126N10N3GXKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPI126N10N3GXKSA1 without requiring registration. Latest information on IPI126N10N3GXKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPI126N10N3GXKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	12.6mOhm @ 46A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 46µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	94W (Tc)
Series	OptiMOS™ 3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Bulk