Home / Single FETs, MOSFETs / IPI50N10S3L16AKSA1

IPI50N10S3L16AKSA1

Infineon Technologies

Product No:

IPI50N10S3L16AKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 50A TO262-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPI50N10S3L16AKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPI50N10S3L16AKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPI50N10S3L16AKSA1 without requiring registration. Latest information on IPI50N10S3L16AKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPI50N10S3L16AKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	15.7mOhm @ 50A, 10V
Product Status	Last Time Buy
Vgs(th) (Max) @ Id	2.4V @ 60µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	100W (Tc)
Series	OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	IPI50N10