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IPI60R190C6XKSA1

Infineon Technologies

Product No:

IPI60R190C6XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 20.2A TO262-3

Quantity:

Delivery:

Payment:

In Stock : 495

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.382

$3.382
10

$3.03905

$30.3905
100

$2.49033

$249.033
500

$2.119982

$1059.991
1000

$1.787928

$1787.928
2000

$1.698534

$3397.068
5000

$1.634684

$8173.42

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190mOhm @ 9.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 630µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	151W (Tc)
Series	CoolMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPI60R190