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IPI65R310CFD

Infineon Technologies

Product No:

IPI65R310CFD

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 10696

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 310

    $0.9215

    $285.665

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 310mOhm @ 4.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 440µA
Supplier Device Package PG-TO262-3-1
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 104.2W (Tc)
Series CoolMOS CFD2™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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