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IPI65R310CFDXKSA1700

Infineon Technologies

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Infineon Technologies

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PG-TO262-3-1

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IPI65R310 - 650V AND 700V COOLMO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	310mOhm @ 4.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 440µA
Supplier Device Package	PG-TO262-3-1
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	104.2W (Tc)
Series	CoolMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.4A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk