Home / Single FETs, MOSFETs / IPI65R420CFD

IPI65R420CFD

Infineon Technologies

Product No:

IPI65R420CFD

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 10945

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

365

$0.779

$284.335

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPI65R420CFD, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPI65R420CFD and the required quantity in your RFQ. IICSEMI provides the latest quote for IPI65R420CFD without requiring registration. Latest information on IPI65R420CFD: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPI65R420CFD latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	31.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	420mOhm @ 3.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 300µA
Supplier Device Package	PG-TO262-3-1
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	83.3W (Tc)
Series	CoolMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.7A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk