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IPI80N04S3-03

Infineon Technologies

Product No:

IPI80N04S3-03

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Batch:

-

Datasheet:

-

Description:

N-CHANNEL AUTOMOTIVE MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 8000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 248

    $1.1495

    $285.076

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3.5mOhm @ 80A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 120µA
Supplier Device Package PG-TO262-3-1
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 188W (Tc)
Series *
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

Detail Info

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IPI80N04S3-03 Tags

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