Home / Single FETs, MOSFETs / IPI90R1K2C3XKSA1

IPI90R1K2C3XKSA1

Infineon Technologies

Product No:

IPI90R1K2C3XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

Datasheet:

Description:

MOSFET N-CH 900V 5.1A TO262-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPI90R1K2C3XKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPI90R1K2C3XKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPI90R1K2C3XKSA1 without requiring registration. Latest information on IPI90R1K2C3XKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPI90R1K2C3XKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.8A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 310µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	83W (Tc)
Series	CoolMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.1A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPI90R