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IPN95R1K2P7ATMA1

Infineon Technologies

Product No:

IPN95R1K2P7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223

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Datasheet:

Description:

MOSFET N-CH 950V 6A SOT223

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	478 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 140µA
Supplier Device Package	PG-SOT223
Drain to Source Voltage (Vdss)	950 V
Power Dissipation (Max)	7W (Tc)
Series	CoolMOS™ P7
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPN95R1