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IPP024N06N3G

Infineon Technologies

Product No:

IPP024N06N3G

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : 1151

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

201

$1.425

$286.425

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	23000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	275 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.4mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 196µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	250W (Tc)
Series	OptiMOS™ 3
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk