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IPP028N08N3GHKSA1

Infineon Technologies

Product No:

IPP028N08N3GHKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

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Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.8mOhm @ 100A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 270µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	300W (Tc)
Series	OptiMOS®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Bulk