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IPP041N12N3GXKSA1

Infineon Technologies

Product No:

IPP041N12N3GXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 120V 120A TO220-3

Quantity:

Delivery:

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Payment:

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In Stock : 990

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.8425

    $5.8425

  • 10

    $5.27535

    $52.7535

  • 100

    $4.367625

    $436.7625

  • 500

    $3.803287

    $1901.6435

  • 1000

    $3.312536

    $3312.536

  • 2000

    $3.189853

    $6379.706

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs 211 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.1mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 270µA
Supplier Device Package PG-TO220-3
Drain to Source Voltage (Vdss) 120 V
Power Dissipation (Max) 300W (Tc)
Series OptiMOS™
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP041

IPP041N12N3GXKSA1 Tags

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