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IPP086N10N3G

Infineon Technologies

Product No:

IPP086N10N3G

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

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Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 8

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8.6mOhm @ 73A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 75µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	125W (Tc)
Series	OptiMOS™ 3
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Bulk