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IPP114N03LGHKSA1

Infineon Technologies

Product No:

IPP114N03LGHKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 7642

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

944

$0.304

$286.976

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	11.4mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	38W (Tc)
Series	OptiMOS™ 3
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk

Detail Info

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