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IPP47N10S33AKSA1

Infineon Technologies

Product No:

IPP47N10S33AKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 47A TO220-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 33mOhm @ 33A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 2mA
Supplier Device Package PG-TO220-3-1
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 175W (Tc)
Series SIPMOS®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP47N

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