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IPP65R095C7XKSA1

Infineon Technologies

Product No:

IPP65R095C7XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 24A TO220-3

Quantity:

Delivery:

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Payment:

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In Stock : 495

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.909

    $5.909

  • 10

    $5.33995

    $53.3995

  • 100

    $4.42092

    $442.092

  • 500

    $3.849685

    $1924.8425

  • 1000

    $3.352949

    $3352.949

  • 2000

    $3.228765

    $6457.53

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2140 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 95mOhm @ 11.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 590µA
Supplier Device Package PG-TO220-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 128W (Tc)
Series CoolMOS™ C7
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP65R095

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