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IPP65R115CFD7AAKSA1

Infineon Technologies

Product No:

IPP65R115CFD7AAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 21A TO220-3

Quantity:

Delivery:

Payment:

In Stock : 27

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$6.0515

$6.0515
10

$5.08155

$50.8155
100

$4.11122

$411.122
500

$3.654384

$1827.192
1000

$3.129072

$3129.072
2000

$2.946358

$5892.716

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1950 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	115mOhm @ 9.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 490µA
Supplier Device Package	PG-TO220-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	114W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™ CFD7
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPP65R115