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IPP65R190CFD7AAKSA1

Infineon Technologies

Product No:

IPP65R190CFD7AAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

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Description:

MOSFET N-CH 650V 14A TO220-3

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1291 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190mOhm @ 6.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 320µA
Supplier Device Package	PG-TO220-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	77W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Package	Tube
Base Product Number	IPP65R190