Home / Single FETs, MOSFETs / IPP65R660CFDXKSA1

IPP65R660CFDXKSA1

Infineon Technologies

Product No:

IPP65R660CFDXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 6A TO220-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPP65R660CFDXKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPP65R660CFDXKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPP65R660CFDXKSA1 without requiring registration. Latest information on IPP65R660CFDXKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPP65R660CFDXKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	660mOhm @ 2.1A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.5V @ 200µA
Supplier Device Package	PG-TO220-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	62.5W (Tc)
Series	CoolMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPP65R