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IPS50R520CP

Infineon Technologies

Product No:

IPS50R520CP

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3-11

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Datasheet:

Description:

MOSFET N-CH 550V 7.1A TO251-3

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	520mOhm @ 3.8A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	PG-TO251-3-11
Drain to Source Voltage (Vdss)	550 V
Power Dissipation (Max)	66W (Tc)
Series	CoolMOS™
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7.1A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPS50R