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IPS60R1K0PFD7SAKMA1

Infineon Technologies

Product No:

IPS60R1K0PFD7SAKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 4.7A TO251-3

Quantity:

Delivery:

Payment:

In Stock : 866

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.8455

$0.8455
10

$0.75905

$7.5905
100

$0.592135

$59.2135
500

$0.489155

$244.5775
1000

$0.386184

$386.184
2000

$0.36044

$720.88
5000

$0.342418

$1712.09
10000

$0.329546

$3295.46

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1Ohm @ 1A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4.5V @ 50µA
Supplier Device Package	PG-TO251-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	26W (Tc)
Series	CoolMOS™PFD7
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPS60R1