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IPS80R1K4P7

Infineon Technologies

Product No:

IPS80R1K4P7

Manufacturer:

Infineon Technologies

Package:

PG-TO251

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Description:

IPS80R1K4 - 800V COOLMOS N-CHANN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 700µA
Supplier Device Package	PG-TO251
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	32W (Tc)
Series	CoolMOS P7™
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tj)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk