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IPT026N10N5ATMA1

Infineon Technologies

Product No:

IPT026N10N5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-1

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 27A/202A 8HSOF

Quantity:

Delivery:

Payment:

In Stock : 7232

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$4.845

$4.845
10

$4.0698

$40.698
100

$3.292415

$329.2415
500

$2.926551

$1463.2755
1000

$2.505862

$2505.862

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.6mOhm @ 150A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 158µA
Supplier Device Package	PG-HSOF-8-1
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	214W (Tc)
Series	OptiMOS™5
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	27A (Ta), 202A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPT026