Home / Single FETs, MOSFETs / IPT65R105G7XTMA1

IPT65R105G7XTMA1

Infineon Technologies

Product No:

IPT65R105G7XTMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-2

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 24A 8HSOF

Quantity:

Delivery:

Payment:

In Stock : 16

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$6.4125

$6.4125
10

$5.4967

$54.967

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPT65R105G7XTMA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPT65R105G7XTMA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPT65R105G7XTMA1 without requiring registration. Latest information on IPT65R105G7XTMA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPT65R105G7XTMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	105mOhm @ 8.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 440µA
Supplier Device Package	PG-HSOF-8-2
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	156W (Tc)
Series	CoolMOS™ C7
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPT65R105