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IPU50R950CE

Infineon Technologies

Product No:

IPU50R950CE

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 235740

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1731

$0.1615

$279.5565

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	950mOhm @ 1.2A, 13V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 100µA
Supplier Device Package	PG-TO251-3
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	53W (Tc)
Series	CoolMOS™
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6.6A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	13V
Package	Bulk