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IPU80R1K2P7AKMA1

Infineon Technologies

Product No:

IPU80R1K2P7AKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

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Description:

MOSFET N-CH 800V 4.5A TO251-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 80µA
Supplier Device Package	PG-TO251-3
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	37W (Tc)
Series	CoolMOS™ P7
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPU80R1