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IPW50R190CE

Infineon Technologies

Product No:

IPW50R190CE

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

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Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1137 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	47.2 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190mOhm @ 6.2A, 13V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 510µA
Supplier Device Package	PG-TO247-3-41
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	152W (Tc)
Series	CoolMOS™
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	24.8A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	13V
Package	Bulk