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IPW65R080CFDAFKSA1

Infineon Technologies

Product No:

IPW65R080CFDAFKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3

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Description:

MOSFET N-CH 650V 43.3A TO247-3

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	161 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	80mOhm @ 17.6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 1.76mA
Supplier Device Package	PG-TO247-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	391W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	43.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPW65R080