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IPW65R099CFD7AXKSA1

Infineon Technologies

Product No:

IPW65R099CFD7AXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 24A TO247-3-41

Quantity:

Delivery:

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In Stock : 240

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

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    $7.771

    $7.771

  • 10

    $6.6576

    $66.576

  • 100

    $5.547715

    $554.7715

  • 500

    $4.895027

    $2447.5135

  • 1000

    $4.40553

    $4405.53

  • 2000

    $4.128149

    $8256.298

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 99mOhm @ 12.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 630µA
Supplier Device Package PG-TO247-3-41
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 127W (Tc)
Series Automotive, AEC-Q101, CoolMOS™ CFD7A
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPW65R099

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