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IPWS65R075CFD7AXKSA1

Infineon Technologies

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Infineon Technologies

Package:

PG-TO247-3-41

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Description:

MOSFET N-CH 650V 32A TO247-3-41

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	75mOhm @ 16.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 820µA
Supplier Device Package	PG-TO247-3-41
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	171W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™ CFD7A
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPWS65