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IRC630PBF

Vishay Siliconix

Product No:

IRC630PBF

Manufacturer:

Vishay Siliconix

Package:

TO-220-5

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Description:

MOSFET N-CH 200V 9A TO220-5

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Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Current Sensing
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	400mOhm @ 5.4A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220-5
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	74W (Tc)
Series	HEXFET®
Package / Case	TO-220-5
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRC630