IRF1010EPBF
Infineon Technologies
Product No:
IRF1010EPBF
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 60V 84A TO220AB
Quantity:
Delivery:
Payment:
In Stock : 3524
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.33
$1.33
10
$1.0906
$10.906
100
$0.84854
$84.854
500
$0.719207
$359.6035
1000
$0.585865
$585.865
2000
$0.551522
$1103.044
5000
$0.525255
$2626.275
10000
$0.50102
$5010.2
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3210 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 50A, 10V |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 200W (Tc) |
| Series | HEXFET® |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IRF1010 |
IRF1010EPBF Tags
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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