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IRF230

Harris Corporation

Product No:

IRF230

Manufacturer:

Harris Corporation

Package:

TO-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 200V 9A TO3

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 400mOhm @ 5A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-3
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 75W (Tc)
Series -
Package / Case TO-204AA, TO-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Mfr Harris Corporation
Vgs (Max) ±20V
Package Bag

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