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IRF231

Harris Corporation

Product No:

IRF231

Manufacturer:

Harris Corporation

Package:

TO-3

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 934

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

320

$0.893

$285.76

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	400mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-3
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	75W (Tc)
Series	-
Package / Case	TO-204AA, TO-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk