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IRF520S

Vishay Siliconix

Product No:

IRF520S

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

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Datasheet:

Description:

MOSFET N-CH 100V 9.2A D2PAK

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	270mOhm @ 5.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	D²PAK (TO-263)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.7W (Ta), 60W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9.2A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRF520