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IRF541

Harris Corporation

Product No:

IRF541

Manufacturer:

Harris Corporation

Package:

TO-220AB

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 4100

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 190

    $1.501

    $285.19

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 77mOhm @ 17A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 150W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Mfr Harris Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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