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IRF5806

Infineon Technologies

Product No:

IRF5806

Manufacturer:

Infineon Technologies

Package:

Micro6™(TSOP-6)

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Datasheet:

Description:

MOSFET P-CH 20V 4A MICRO6

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	594 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	11.4 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	86mOhm @ 4A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	Micro6™(TSOP-6)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2W (Ta)
Series	HEXFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tube