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IRF60R217

Infineon Technologies

Product No:

IRF60R217

Manufacturer:

Infineon Technologies

Package:

D-PAK (TO-252AA)

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Datasheet:

Description:

MOSFET N-CH 60V 58A DPAK

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9.9mOhm @ 35A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 50µA
Supplier Device Package	D-PAK (TO-252AA)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	83W (Tc)
Series	StrongIRFET™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IRF60R217