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IRF640FP

STMicroelectronics

Product No:

IRF640FP

Manufacturer:

STMicroelectronics

Package:

TO-220FP

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Datasheet:

Description:

MOSFET N-CH 200V 18A TO220FP

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	180mOhm @ 9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220FP
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	40W (Tc)
Series	MESH OVERLAY™
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRF6