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IRF730

Harris Corporation

Product No:

IRF730

Manufacturer:

Harris Corporation

Package:

TO-220

Batch:

Datasheet:

Description:

N-CHANNEL, MOSFET

Quantity:

Delivery:

Payment:

In Stock : 24825

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

243

$1.178

$286.254

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1Ohm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	400 V
Power Dissipation (Max)	100W (Tc)
Series	PowerMESH™ II
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IRF7