Home / Single FETs, MOSFETs / IRF821

IRF821

Harris Corporation

Product No:

IRF821

Manufacturer:

Harris Corporation

Package:

TO-220AB

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IRF821, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IRF821 and the required quantity in your RFQ. IICSEMI provides the latest quote for IRF821 without requiring registration. Latest information on IRF821: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IRF821 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3Ohm @ 1.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	450 V
Power Dissipation (Max)	50W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.5A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk