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IRF9Z24NLPBF

Infineon Technologies

Product No:

IRF9Z24NLPBF

Manufacturer:

Infineon Technologies

Package:

TO-262

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Datasheet:

Description:

MOSFET P-CH 55V 12A TO262

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	175mOhm @ 7.2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-262
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	3.8W (Ta), 45W (Tc)
Series	HEXFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube