Home / Single FETs, MOSFETs / IRFB11N50APBF

IRFB11N50APBF

Vishay Siliconix

Product No:

IRFB11N50APBF

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Batch:

Datasheet:

Description:

MOSFET N-CH 500V 11A TO220AB

Quantity:

Delivery:

Payment:

In Stock : 1161

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.299

$2.299
10

$2.06435

$20.6435
100

$1.65908

$165.908
500

$1.363117

$681.5585
1000

$1.129436

$1129.436
2000

$1.051546

$2103.092
5000

$1.012596

$5062.98

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IRFB11N50APBF, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IRFB11N50APBF and the required quantity in your RFQ. IICSEMI provides the latest quote for IRFB11N50APBF without requiring registration. Latest information on IRFB11N50APBF: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IRFB11N50APBF latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	520mOhm @ 6.6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	170W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFB11