Home / Single FETs, MOSFETs / IRFB5615PBFXKMA1

IRFB5615PBFXKMA1

Infineon Technologies

Product No:

IRFB5615PBFXKMA1

Manufacturer:

Infineon Technologies

Package:

TO-220AB

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Datasheet:

Description:

MOSFET N-CH

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	39mOhm @ 21A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 100µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	144W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube