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IRFB9N30A

Vishay Siliconix

Product No:

IRFB9N30A

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

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Datasheet:

Description:

MOSFET N-CH 300V 9.3A TO220AB

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	450mOhm @ 5.6A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	300 V
Power Dissipation (Max)	96W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9.3A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFB9