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IRFBE30PBF

Vishay Siliconix

Product No:

IRFBE30PBF

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Batch:

Datasheet:

Description:

MOSFET N-CH 800V 4.1A TO220AB

Quantity:

Delivery:

Payment:

In Stock : 1017

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.052

$2.052
10

$1.8449

$18.449
100

$1.48314

$148.314
500

$1.218546

$609.273
1000

$1.00965

$1009.65
2000

$0.940016

$1880.032
5000

$0.905198

$4525.99
10000

$0.87039

$8703.9

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3Ohm @ 2.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	125W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFBE30